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2N3019 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistor
2N3019
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS
DESCRIPTION
The 2N3019 is a silicon planar epitaxial NPN
transistors in Jedec TO-39 metal case, designed
for high-current, high frequency amplifier
application. It feature high gain and low saturation
voltage.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb ≤ 25 oC
at Tcase ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
November 1997
Value
140
80
7
1
0.8
5
-65 to 200
200
Unit
V
V
V
A
W
W
oC
oC
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