2N2907AHR Datasheet, PDF (1/16 Pages) STMicroelectronics – Hi-Rel 60 V - 0.6 A PNP transistor

2N2907AHR
Hi-Rel 60 V - 0.6 A PNP transistor
Features
Datasheet — production data
Parameter
BV_CEO
I_C (max)
H_FE at 10 V - 150 mA
Value
60 V
0.6 A
> 100
■ Linear gain characteristics
■ Hermetic packages
■ ESCC and JANS qualified
■ European preferred part list EPPL
Description
The 2N2907AHR is a silicon planar PNP
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
1
2
3
TO-18
3
3
1
2
LCC-3
4
1
2
LCC-3UB
Pin 4 in LCC-3UB is connected to the metallic lid.
Figure 1. Internal schematic diagram
Table 1. Device summary⁽¹⁾
Order codes Qualification
Agency spec.
Package
Radiation level EPPL
JANS2N2907A
2N2907AUB
SOC2907A
JANS
ESCC
MIL-PRF-19500/291
5201/001
LCC-3UB
LCC-3UB
LCC-3
-
Yes
-
Yes
2N2907AHR
TO-18
-
1. Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels.
May 2012
This is information on a product in full production.
Doc ID 15382 Rev 3
1/16
www.st.com
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