2N2369A Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH-SPEED SATURATED SWITCH

2N2369A
HIGH-SPEED SATURATED SWITCH
DESCRIPTION
The 2N2369A is a silicon planar epitaxial NPN tran-
sistor in Jedec TO-18 metal case. It is designed spe-
cifically for high-speed saturated switching applica-
tions at current levels from 100 µA to 100 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V_{CB O}
V_{CE S}
V_{CE O}
V_{EB O}
I_C
I_CM
P_{t ot}
T_stg, T_j
Parameter
Collector-base Voltage (I_E = 0)
Collector-emitter Voltage (V _BE = 0)
Collector-emitter Voltage (I _B = 0)
Emitter-base Voltage (I_C = 0)
Collector Current
Collector Current (10 µs pulse)
Total Power Dissipation at T_amb ≤ 25 °C
at T _{c ase} ≤ 25 °C
at T _{c ase} ≤ 100 °C
Storage and Junction Temperature
November 1988
Value
40
40
15
4.5
0.2
0.5
0.36
1.2
0.68
– 65 to 200
Unit
V
V
V
V
A
A
W
W
W
°C
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