2N2369 Datasheet, PDF (1/4 Pages) Motorola, Inc – Switching Transistors

2N2369
HIGH-FREQUENCY SATURATED SWITCH
DESCRIPTION
The 2N2369 is a silicon planar epitaxial NPN tran-
sistor in Jedec TO-18 metal case. It is designed spe-
cifically for high-speed saturated switching applica-
tions at current levels from 100 µA to 100 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CBO Collector-base Voltage (I_E = 0)
V_CES
Collector-emitter Voltage (V _BE = 0)
V_CEO
Collector-emitter Voltage (I_B = 0)
V_EBO
Emitter-base Voltage (I_C = 0)
I_CM
Collector Peak Current (t = 10 µs)
P_{to t}
Total Power Dissipation at T _amb ≤ 25 °C
at T _{c as e} ≤ 25 °C
at T _{c as e} ≤ 100 °C
T_{s tg}, T_j Storage and Junction Temperature
Products approved to CECC 50004-022/023 available on request.
January 1989
V al ue
40
40
15
4.5
0.5
0.36
1.2
0.68
– 65 to 200
Unit
V
V
V
V
A
W
W
W
°C
1/4