2N2219A_03 Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH SPEED SWITCHES

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DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currents and low saturation voltage.
2N2219A
2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Total Dissipation at Tamb ≤ 25 ^oC
for 2N2219A
for 2N2222A
at TC ≤ 25 ^oC
for 2N2219A
for 2N2222A
Storage Temperature
Max. Operating Junction Temperature
February 2003
Value
75
40
6
0.6
0.8
0.8
0.5
3
1.8
-65 to 175
175
Unit
V
V
V
A
A
W
W
W
W
o_C
o_C
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