2N2102 Datasheet, PDF (1/4 Pages) STMicroelectronics – EPITAXIAL PLANAR NPN

®
s GENERAL PURPOSE AMPLIFIER AND
SWITCH
DESCRIPTION
The 2N2102 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intended for a wide variety of small-signall and
medium power applications in military and
industrial equipments.
2N2102
EPITAXIAL PLANAR NPN
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VCER
VEBO
IC
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE ≤ 10Ω)
Emitter-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb ≤ 25 ^oC
at TC ≤ 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
December 2002
Value
120
65
80
7
1
1
5
-65 to 175
175
Unit
V
V
V
V
A
W
W
o_C
o_C
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