2N1893 Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN medium power transistor

2N1893
GENERAL PURPOSE HIGH-VOLTAGE TYPE
DESCRIPTION
The 2N1893 is a silicon planar epitaxial NPN tran-
sistor in Jedec TO-39 metal case, designed for use
in high-performance amplifier, oscillator and switch-
ing circuits.
It provides greater voltage swings in oscillator and
amplifier circuits and more protection in inductive
switching circuits due to its 120 V collector-to-base
voltage rating.
Products approved to CECC 50002-104 avail-
able on request.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CBO
V_CER
V_CEO
V_EBO
I_C
P_{to t}
T_stg, T_j
Parameter
Collector-base Voltage (I_E = 0)
Collector-emitter Voltage (R_BE ≤ 10 Ω)
Collector-emitter Voltage (I_B = 0)
Emitter-base Voltage (I_C = 0)
Collector Current
Total Power Dissipation at T _amb ≤ 25 °C
at T _{c as e} ≤ 25 °C
at T _{c as e} ≤ 100 °C
Storage and Junction Temperature
October 1988
V al ue
120
100
80
7
0.5
0.8
3
1.7
– 65 to 200
Unit
V
V
V
V
A
W
W
W
°C
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