2N1711 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistor

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2N1711
EPITAXIAL PLANAR NPN
DESCRIPTION
The 2N1711 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intented for use in high performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in
amplifiers where low noise is an important factor.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCER
VEBO
IC
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (RBE ≤ 10Ω)
Emitter-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb ≤ 25 ^oC
at TC ≤ 25 ^oC
at TC ≤ 100 ^oC
Storage Temperature
Max. Operating Junction Temperature
September 2002
Value
75
50
7
500
0.8
3
1.7
-65 to 175
175
Unit
V
V
V
mA
W
W
W
o_C
o_C
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