2N1613 Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN medium power transistor

2N1613
2N1711
SWITCHES AND UNIVERSAL AMPLIFIERS
DESCRIPTION
The 2N1613 and 2N1711 are silicon planar epitaxial
NPN transistors in Jedec TO-39 metal case. They
are designed for use in high-performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers
where low noise is an important factor.
Products approved to CECC 50002-104 avail-
able on request.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CBO
V_CER
V_EBO
I_C
P_{to t}
T_stg, T_j
Parameter
Collector-base Voltage (I_E = 0)
Collector-emitter Voltage (R_BE ≤ 10 Ω)
Emitter-base Voltage (I_C = 0)
Collector Current
Total Power Dissipation at T _amb ≤ 25 °C
at T _{c as e} ≤ 25 °C
at T _{c as e} ≤ 100 °C
Storage and Junction Temperature
January 1989
V al ue
75
50
7
500
0.8
3
1.7
– 65 to 200
Unit
V
V
V
mA
W
W
W
°C
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