1N5711 Datasheet, PDF (1/3 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

®
1N 5711
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
Matched batches are available on request.
ABSOLUTE RATINGS (limiting values)
Symbol
V_RRM
I_F
P_tot
T_stg
Tj
TL
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Power Dissipation*
Storage and Junction Temperature Range
T_a = 25 °C
T_a = 25°C
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
DO 35
(Glass)
Value
Unit
70
V
15
mA
430
mW
- 65 to 200
°C
- 65 to 200
230
°C
THERMAL RESISTANCE
Symbol
Rth(j-a)
Junction-ambient*
Test Conditions
Value
400
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
VBR
V_F * *
I_R * *
T_amb = 25°C
T_amb = 25°C
T_amb = 25°C
T_amb = 25°C
Test Conditions
I_R = 10µA
I_F = 1mA
I_F = 15mA
V_R = 50V
Min. Typ. Max. Unit
70
V
0.41
V
1
0.2
µA
DYNAMIC CHARACTERISTICS
Symbol
C
τ
T_amb = 25°C
T_amb = 25°C
Test Conditions
V_R = 0V
I_F = 5mA
f = 1MHz
Krakauer Method
Min.
Typ.
Max.
2
100
* On infinite heatsink with 4mm lead length
** Pulse test: tp ≤ 300µs δ < 2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Unit
pF
ps
August 1999 Ed: 1A
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