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STD3LN62K3 Datasheet, PDF (4/21 Pages) STATEK CORPORATION – N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3™ Power MOSFE DPAK, TO-220FP, TO-220, IPAK
◁
Electrical characteristics
STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 1.25 A
Min. Typ. Max. Unit
620
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
2.5
3
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0 -
386
30
5
pF
- pF
pF
Co(tr)(1)
Co(er)(2)
Eq. capacitance time
related
Eq. capacitance
energy related
VGS = 0, VDS = 0 to 496 V
-
20
- pF
-
28
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
7
-
Ω
Qg
Total gate charge
VDD = 496 V, ID = 2.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
17
nC
-
2.7
- nC
10.7
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/21
Doc ID 18452 Rev 1
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