STP9434 Datasheet, PDF (3/6 Pages) Stanson Technology – STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

STP9434
P Channel Enhancement Mode MOSFET
- 7.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS VGS=0V,ID=-250uA -20
VGS(th) VDS=VGS,ID=-250uA -0.35
V
-0.9 V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±100 nA
Zero Gate Voltage
Drain Current
On-State Drain
Current
Drain-source On-
Resistance
Forward
Transconductance
IDSS
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
-1
-10 ^uA
ID(on) VDS=-5V,VGS=-4.5V -10
A
RDS(on)
VGS=-4.5V,ID=-7.2A
VGS=-2.5V,ID=-5.2A
VGS=-1.8V,ID=-3.6A
30 40
40 52 mΩ
50 62
gfs
VDS=-5.0V,ID=-6.2A
14
S
Diode Forward Voltage VSD
IS=-2.5A,VGS=0V
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-5V
ID≡-6.4A
VDS ==-10V,VGS=0V
f=1MHz
VDD=-10V,RL=6Ω
ID=-1A,VGEN=-4.5V
RG=6Ω
20 25
4.5
nC
8.0
700
160
pF
120
20 30
40 65 _nS
90 120
70 90
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9434 2010. V1