STN4346 Datasheet, PDF (3/7 Pages) Stanson Technology – STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STN4346
N Channel Enhancement Mode MOSFET
6.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS VGS=0V,ID=250uA 30
VGS(th) VDS=VGS,ID=250uA 1.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
Zero Gate Voltage
Drain Current
IDSS
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85℃
On-State Drain
Current
Drain-source On-
Resistance
Forward
Transconductance
ID(on)
VDS≥5V,VGS=10V
25
RDS(on)
VGS=10V,ID=6.8A
VGS=4.5V,ID=6.0A
VGS=2.5V,ID=5.6A
gfs
VDS=15V,ID=6.2A
Diode Forward Voltage VSD
IS=2.3A,VGS=0V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=15V,VGS=10V
ID≡2A
Qgd
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD=15V,RL=15Ω
ID=1.0A,VGS=10V
RG=6Ω
V
3.0 V
±100 nA
1
100 ^uA
A
18 26
24 34 mΩ
36 40
13
S
0.8 1.2 V
16 24
3
nC
2.5
15 20
6
12 _nS
10 20
40 80
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4346 2010. V1