STN4130 Datasheet, PDF (3/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN4130
N Channel Enhancement Mode MOSFET
20.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current
Zero Gate Voltage
Drain Current
Symbol
Condition
Min
V(BR)DSS VGS=0V,ID=250mA 60
VGS(th) VDS=VGS,ID=250uA
1
IGSS
IDSS
VDS=0V,VGS=±20V
VDS=60V,VGS=0V
VDS=48V,VGS=0V
TJ=55℃
Typ Max Unit
V
2.5 V
100 nA
1
uA
5
Drain-source On-
Resistance
Forward
Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=10V,ID=20A
VGS=4.5V,ID=20A
VDS=5V,ID=20A
IS=1.0A,VGS=0V
VDS=10V,VDS=30V
ID≡20A
VDS =30V,VGS=0V
F=1MHz
VDS=30V, VGS=10V
RL= 1.5Ω
ID=5.0A,VGEN=3Ω
40
50
47
58
mΩ
50
S
0.78 1.0 V
34
16 _nC
5.4
1600
100
pF
68
7.5
6.5
nS
33
7.5
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN4130 2009. V1