ST03N20 Datasheet, PDF (3/6 Pages) Stanson Technology – SOT-89 package design

ST03N20
N Channel Enhancement Mode MOSFET
1.9A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current
Zero Gate Voltage
Drain Current
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS
VDS=0V,VGS=±30V
IDSS
VDS=160V,VGS=0V
200
3
V
4
5
V
±100 nA
1
uA
Drain-source On-
Resistance
Forward
Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=10V,ID=12A
VDS=10V,ID=2A
IS=1A,VGS=0V
VDS=160V,VGS=10V
ID=1 A
VDS =25V,VGS=0V
f=1MHz
VDS=100
VGEN=10V, ID=1A
RG=25Ω
750 850 mΩ
3.6
S
1
V
9
4 _nC
2
260 500
160 300 _pF
55 110
10 20
35
70 _nS
10 20
28 56
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
ST03N20 2014. V1