M02N60 Datasheet, PDF (2/5 Pages) Stanson Technology – N Channel MOSFET

N Channel MOSFET
2.0A
M02N60
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current-
Forward
Gate Threshhold Voltage
Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
SYMBO MIN TYP MAX UNIT
L
V(BR)DSS 600
Vdc
CONDITION
VGS=0, ID=250uA
IDSS
IGSSF
0.1 mA
1.0 mA
100 nA
VDS=600V, VGS=0
VDS=480V, VGS=0, Tj=125
VGSF=20V, VDS=0
VGS(th) 2.0
RDS(on)
4.0 V
4.4 Ohm
VDS=VGS, ID=250uA
VGS=10V, ID=1.2A*
Ciss
Coss
Crss
td(on)
Td(off)
435
pF
56
pF VDS=25V, VGS=0, f=1 MHz
9.2
pF
12
nS
30
nS
V_DD=300V, I_D=2.0A,
Rise Time
t_r
21
nS
V_GS=10V, R_G=18
Fall Time
t_f
24
nS
Total Gate Charge
Gate-Drain Charge
Q_g
13 22 nC
Q_gd
6.0
nC
V_DS=400V, I_D=2.0A
Gate-Drain Charge
Q_gs
2.0
nC
V_GS=10V*
Intemal Drain Inductance
Internal Drain Inductance
L_D
4.5
nH ^{Measured from the drain lead}
0.25’’ From package to center
of die
Ls
7.5
nH ^{Measured from the sorce lead}
0.25’’ form package to source
bond pad
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Tum Time
Reverse Recovery Time
VDS
ton
trr
1.5 V
**
nS
340
nS
Is=2.0A, VGS=0V
d_IS/d_t = 100A/
*Pulse Test: Pulse Width 300 S, Duty Cycle 2%
**Negligible, Dominated by circuit inductance
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