M01N60 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – N Channel MOSFET

N Channel MOSFET
1.0A
M01N60
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current-
Forward
Gate Threshhold Voltage
Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
SYMBO MIN TYP MAX UNIT
L
V(BR)DSS 600
Vdc
CONDITION
VGS=0, ID=250uA
IDSS
IGSSF
1.0 mA
0.25 mA
100 nA
VDS=600V, VGS=0
VDS=480V, VGS=0, Tj=125
VGSR=20V, VDS=0
VGS(th) 2.0
RDS(on)
Ciss
210
Coss
28
Crss
9
ton
8
toff
18
4.0 V
8 Ohm
VDS=VGS, ID=250uA
VGS=10V, ID=0.6A*
pF
pF VDS=25V, VGS=0, f=1 MHz
pF
nS
nS
V_DS=300V, I_D=1.0A,
Rise Time
t_r
21
nS
V_GS=10V, R_G=18
Fall Time
t_f
24
nS
Total Gate Charge
Gate-Drain Charge
Q_g
8.5
nC
Q_gd
8.5
nC
V_DS=400V, I_D=1.0A
Gate-Drain Charge
Q_gs
1.8
nC
V_GS=10V*
Intemal Drain Inductance
Internal Drain Inductance
L_D
4.5
nH ^{Measured from the drain lead}
0.25’’ From package to center
of die
Ls
7.5
nH ^{Measured from the sorce lead}
0.25’’ package to source bond
pad
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Tum Time
Reverse Recovery Time
VDS
ton
trr
1.5 V
**
nS
350 500 nS
Is=1.0A, VGS=0V
d_IS/d_t = 100A/
*Pulse Test: Pulse Width 300 S, Duty Cycle 2%
**Negligible, Dominated by circuit inductance
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: [phone] FAX: [phone]