STP9235 Datasheet, PDF(1/6 Page) Stanson Technology – STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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STP9235 Datasheet, PDF (1/6 Pages) Stanson Technology – STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

STP9235

P Channel Enhancement Mode MOSFET

- 7.5A

DESCRIPTION

STP9235 is the P-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application, notebook computer power management and other

battery powered circuits where high-side switching.

PIN CONFIGURATION

SOP-8

PART MARKING

SOP-8

FEATURE

ï¿½ -25V/-7.5A, RDS(ON) = 45mÎ©

@VGS = -10V

ï¿½ -25V/-6.0A, RDS(ON) = 55mÎ©

@VGS = -6.0V

ï¿½ -25V/-5.4A, RDS(ON) = 65mÎ©

@VGS = -4.5V

ï¿½ Super high density cell design for

extremely low RDS(ON)

ï¿½ Exceptional on-resistance and maximum DC

current capability

ï¿½ SOP-8 package design

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP9235 2009. V1

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