STP7401 Datasheet, PDF(1/6 Page) Stanson Technology – STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STP7401 Datasheet, PDF (1/6 Pages) Stanson Technology – STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STP7401

P Channel Enhancement Mode MOSFET

-2.8A

DESCRIPTION

STP7401 is the P-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as cellular phone and notebook

computer power management, other battery powered circuits, and low in-line power

loss are required. The product is in a very small outline surface mount package.

PIN CONFIGURATION

SOT-323 (SC-70)

1.Gate 2.Source 3.Drain

PART MARKING

SOT-323

FEATURE

z -30V/-2.8A, RDS(ON) = 115mÎ©

@VGS = -10V

z -30V/-2.5A, RDS(ON) = 135mÎ©

@VGS = -4.5V

z -30V/-1.5A, RDS(ON) = 170mÎ©

@VGS = -2.5V

z -30V/-1.0A, RDS(ON) = 240mÎ©

@VGS = -1.8V

z Super high density cell design for

Extremely low RDS(ON)

z Exceptional on-resistance and

maximum DC current capability

z SOT-323 (SC-70) package design

01YW

Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

STP7401S32RG

SOT-323

01YW

â» Process Code : A ~ Z ; a ~ z

â» ST7401S32RG S32 : SOT-23-3L ; R : Tape Reel ; G : Pb â Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP7401 2005. V1

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