STP6635GH Datasheet, PDF (1/8 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

STP6635GH
P Channel Enhancement Mode MOSFET
-40.0A
DESCRIPTION
STP6635GH is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The STP413D has
been designed specially to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM controllers. It has been optimized
for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
-30V/-26.0A, R_DS(ON) = 20mΩ
@VGS = -10V
-30V/-16.0A, R_DS(ON) = 36mΩ
@VGS =-4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1