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| STP6625 Datasheet, PDF (1/7 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET | |||
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STP6625
P Channel Enhancement Mode MOSFET
-5.0A
SCRIPTION
STP6625 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, noteook power management ane ther
battery powered circuits where high-side witching.
PIN CONFIGURATION
SOP-8
FEATURE
lï¬ -60V/-5.0A, RDS(ON) = 60mΩ (Typ.)
@VGS =-10
lï¬ -60V/-3.0A, RDS(ON) = 85mΩ
@VGS = -4.5V
lï¬ Super high density cell design for
extremely low RDS(ON)
lï¬ Exceptional on-resistance and maximum
DC current capability
lï¬ SOP-8 package design
PART MARKING
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
.
STP6625 2010. V1
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