STP6506 Datasheet, PDF (1/6 Pages) Stanson Technology – Dual P Channel Enhancement Mode MOSFET

STP6506
Dual P Channel Enhancement Mode MOSFET
-2.8A
DESCRIPTION
The STC6506 is the dual P-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage application, such as
notebook computer power management and other battery powered circuits where high-side
switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION
TSOP-6
D1 S1 D2
06YW
FEATURE
◆ -30V/-2.8A, RDS(ON)=105mohm@VGS=-10V
◆ -30V/-2.5A, RDS(ON)=135mohm@VGS=-4.5V
◆ Super high density cell design for extremely
low RDS(ON)
◆ Exceptional an-resistance and maximum DC
current capability
◆ TSOP-6P package design
G1 S2 G2
Y: Year
A: Produces Code
p-channel
p-channel
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP6506 2010. V1