STP607D Datasheet, PDF (1/8 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

STP607D
P Channel Enhancement Mode MOSFET
-10.0A
DESCRIPTION
STP607D is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The STP607D has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
-60V/-10.0A, RDS(ON) = 150mΩ（Typ.）
@VGS = -10V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
TO-252package design
PART MARKING
Y: Year Code A: Date Code Q: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
.
STP607D 2010. V1