STP601 Datasheet, PDF (1/7 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

STP601 / STP601D
P Channel Enhancement Mode MOSFET
-30A
DESCRIPTION
STP601/STP601D is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. The
STP401 has been designed specially to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
-60V/-20.0A, R_DS(ON) = 20mΩ(typ.)
@VGS = -10V
-60V/-20.0A, R_DS(ON) = 27mΩ
@VGS = -4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
TO-252,TO-251 package design
( STP601D )
PART MARKING
( STP610 )
Y: Year Code
A: Week Code
Q: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP601 / STP601D 2010. V1