STP4953 Datasheet, PDF (1/8 Pages) Stanson Technology – Dual P Channel Enhancement Mode MOSFET

STP4953
Dual P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION
STP4953 is the dual P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
PIN CONFIGURATION
SOP-8
FEATURE
� -30V/-5.2A, R_DS(ON) = 60mΩ
@VGS =-10V
� -30V/-4.5A, R_DS(ON) = 80mΩ
@VGS = -6.0V
� -30V/-3.8A, R_DS(ON) = 90mΩ
@VGS = -4.5V
� Super high density cell design for
extremely low R_DS(ON)
� Exceptional on-resistance and maximum
DC current capability
� SOP-8 package design
PART MARKING
SOP-8
ORDERING INFORMATION
Part Number
Package
Part Marking
STP4953S8RG
SOP-8
STP4953
STP4953S8TG
SOP-8
STP4953
※ Process Code : A ~ Z ; a ~ z
※ STP4953S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STP4953S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4953 2007. V1