STP4931 Datasheet, PDF(1/6 Page) Stanson Technology – STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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STP4931 Datasheet, PDF (1/6 Pages) Stanson Technology – STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

STP4931

Dual P Channel Enhancement Mode MOSFET

-8.5A

DESCRIPTION

STP4931 is the dual P-Channel logic enhancement mode power field effect transistors

are produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application, notebook computer power management

and other battery powered circuits Where hight-side switching.

PIN CONFIGURATION

SOP-8

FEATURE

ï¿½ -20V/-8.5A, RDS(ON) = 20mÎ© (Typ.)

@VGS =-4.5V

ï¿½ -20V/-8.0A, RDS(ON) = 25mÎ©

@VGS = -2.5V

ï¿½ -20V/-5.0A, RDS(ON) = 35mÎ©

@VGS = -1.8V

ï¿½ Super high density cell design for

extremely low RDS(ON)

ï¿½ Exceptional on-resistance and maximum

DC current capability

ï¿½ SOP-8 package design

PART MARKING

SOP-8

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP4931 2009. V1

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