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| STP4441 Datasheet, PDF (1/6 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET | |||
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STP4441
P Channel Enhancement Mode MOSFET
-10A
SCRIPTION
STP4441 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, noteook power management ane ther
battery powered circuits where high-side witching.
PIN CONFIGURATION
SOP-8
FEATURE
l -60V/-10.0A, RDS(ON) = 55mΩ (Typ.)
@VGS =-10V
l -60V/-5.0A, RDS(ON) = 73mΩ
@VGS = -4.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional on-resistance and maximum
DC current capability
l SOP-8 package design
PART MARKING
SOP-8
Yï¼Year Code
Aï¼Date Code
Bï¼Wafer Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
.
STP4441 2010. V1
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