STP4435A Datasheet, PDF(1/6 Page) Stanson Technology – STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STP4435A Datasheet, PDF (1/6 Pages) Stanson Technology – STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STP4435A

P Channel Enhancement Mode MOSFET

-10A

DESCRIPTION

STP4435A is the P-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as LCD backlight, notebook

computer power management, and other battery powered circuits.

PIN CONFIGURATION

SOP-8

FEATURE

z -30V/-9.2A, RDS(ON) = 22mÎ© (Typ.)

@VGS =-10V

z -30V/-7.0A, RDS(ON) = 30mÎ©

@VGS = -4.5V

z Super high density cell design for

extremely low RDS(ON)

z Exceptional on-resistance and maximum

DC current capability

z SOP-8 package design

PART MARKING

SOP-8

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP4435A 2007. V1

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