STP4435 Datasheet, PDF (1/6 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

STP4435
P Channel Enhancement Mode MOSFET
-10A
DESCRIPTION
STP4435 is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
PIN CONFIGURATION
SOP-8
FEATURE
l -30V/-9.2A, R_DS(ON) =-22mΩ (Typ.)
@VGS =-10V
l -30V/-7.0A, R_DS(ON) = 30mΩ
@VGS = -4.5V
l Super high density cell design for
extremely low R_DS(ON)
l Exceptional on-resistance and maximum
DC current capability
l SOP-8 package design
PART MARKING
SOP-8
Y：Year Code
A：Preduce Code
B：Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435 2007. V1