STP4407 Datasheet, PDF(1/6 Page) Stanson Technology – The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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STP4407 Datasheet, PDF (1/6 Pages) Stanson Technology – The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

STP4407

P Channel Enhancement Mode MOSFET

- 12A

DESCRIPTION

The STP4407 is the P-Channel logic enhancement mode power field effect transistor

is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular

phone and notebook computer power management and other batter powered

circuits where high-side switching.

PIN CONFIGURATION

SOP-8

FEATURE

ï¿½ -30V/-12A, RDS(ON) = 9mÎ©

@VGS = -20V

ï¿½ -30V/-12A, RDS(ON) = 10mÎ©

@VGS = -10V

ï¿½ -30V/-10A, RDS(ON) = 15mÎ©

@VGS = -5V

ï¿½ Super high density cell design for

extremely low RDS(ON)

ï¿½ Exceptional on-resistance and maximum DC

current capability

ï¿½ SOP-8 package design

PART MARKING

SOP-8

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

STP4407 2009. V1

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