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| STP413D Datasheet, PDF (1/10 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET | |||
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STP413D
P Channel Enhancement Mode MOSFET
-12.0A
DESCRIPTION
STP413D is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The STP413D has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
lï¬ -40V/-12.0A, RDS(ON) = 36mΩ (Typ.)
@VGS = -10V
lï¬ -40V/-8.0A, RDS(ON) = 52mΩ
@VGS =-4.5V
lï¬ Super high density cell design for
extremely low RDS(ON)
lï¬ Exceptional on-resistance and
maximum DC current capability
lï¬ TO-252,TO-251 package design
PART MARKING
Yï¼Year Code
Aï¼Perduce Code
Qï¼Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP413D 2009. V1
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