STP3467 Datasheet, PDF (1/6 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

STP3467
P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION
The STP3467 is the P-Channel enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6P
D SD
FEATURE
◆ -20V/-5.0A, RDS(ON)=90mohm@VGS=-4.5V
◆ -20V/-3.5A, RDS(ON)=110mohm@VGS=-2.5V
◆ -20V/-1.7A, RDS(ON)=140mohm@VGS=-1.8V
67YW
D DG
Y: Year
A: Week Code
◆ Super high density cell design for extremely low
RDS(ON)
◆ Exceptional an-resistance and maximum DC
current capability
◆ TSOP-6P package design
ORDERING INFORMATION
Part Number
Package
Part Marking
STP3467ST6RG
TSOP-6
67YW
※ Week Code Code : A ~ Z ; a ~ z
※ STP3467ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3467 2008. V1