STP3052D Datasheet, PDF (1/6 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

STP3052D
P Channel Enhancement Mode MOSFET
-25.0A
DESCRIPTION
STP3052D is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application. Such as DC/DC converter
and Desktop computer power management.
The package is universally preferred for commercial industrial surface mount
applications.
PIN CONFIGURATION (D-PAK)
FEATURE
TO-252
TO-251
-30V/-25.0A, R_DS(ON) = 45mΩ (Typ.)
@VGS = -10V
-30V/-16.0A, R_DS(ON) = 78mΩ
@VGS =-5.0V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP3052D 2009. V1