STP2327 Datasheet, PDF (1/5 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

STP2327
P Channel Enhancement Mode MOSFET
-1.5A
DESCRIPTION
STP2327 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-6L
FEATURE
l -100V/-1.5.0A, R_DS(ON) = 520m-ohm (Typ.)
@VGS = -10V
l -100V/-0.5.0A, R_DS(ON) = 600m-ohm
@VGS = -4.5V
l Super high density cell design for
extremely low R_DS(ON)
l Exceptional on-resistance and maximum
DC current capability
l SOT-23-6L package design
PART MARKING
Y: Year Code A: date Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP2327 2013. Rev.1