STP1013 Datasheet, PDF (1/7 Pages) Stanson Technology – Dual P Channel Enhancement Mode MOSFET

STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
DESCRIPTION
STP1013 is the P-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer power management and other bettery powered circuits where
high-side switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION
SOT-523 / SC-89
FEATURE
-20V/-0.45A, R_DS(ON) =520ohm
@VGS =-4.5V
-20V/-0.35A, R_DS(ON) =700ohm
@VGS =-2.5V
-20V/-0.25A, R_DS(ON) =950ohm
@VGS =-1.8V
Super high density cell design for extremely
low R_DS(ON)
Exceptional low on-resistance and maximum
DC current capability
SOT-523 / SC89 package design
PART MARKING
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1