STN9926AA Datasheet, PDF(1/7 Page) Stanson Technology – The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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STN9926AA Datasheet, PDF (1/7 Pages) Stanson Technology – The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

STN9926AA

Dual N Channel Enhancement Mode MOSFET

6.0A

DESCRIPTION

The STN9926AA is the Dual N-Channel logic enhancement mode power field effect

transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , notebook computer

Li-ion Battery , power management and other battery powered circuits where high-side

switching .

PIN CONFIGURATION

SOP-8

FEATURE

z 20V/6.0A, RDS(ON) = 30mÎ©

@VGS = 4.5V

z 20V/5.0A, RDS(ON) = 42mÎ©

@VGS = 2.5V

z Super high density cell design for

extremely low RDS(ON)

z Exceptional on-resistance and

maximum DC current capability

z SOP-8 package design

PART MARKING

SOP-8

ORDERING INFORMATION

Part Number

Package

Part Marking

STN9926AAS8RG

SOP-8

STN9926

STN9926AAS8TG

SOP-8

STN9926

â» Process Code : A ~ Z ; a ~ z

â» STN9926AAS8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb â Free

â» STN9926AAS8TG S8 : SOP-8 ; T : Tube ; G : Pb â Free

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN9926AA 2007. V1

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