STN9926 Datasheet, PDF(1/7 Page) Stanson Technology – The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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STN9926 Datasheet, PDF (1/7 Pages) Stanson Technology – The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

STN9926

Dual N Channel Enhancement Mode MOSFET

DESCRIPTION

The STN9926 is the Dual N-Channel logic enhancement mode power field effect

transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , notebook computer

power management and other battery powered circuits where high-side switching .

PIN CONFIGURATION

SOP-8

FEATURE

ï¿½ 20V/5.0A, RDS(ON) = 50mÎ©

@VGS = 4.5V

ï¿½ 20V/4.0A, RDS(ON) = 65mÎ©

@VGS = 2.5V

ï¿½ 20V/2.8A, RDS(ON) = 90mÎ©

@VGS = 1.8V

ï¿½ Super high density cell design for

extremely low RDS(ON)

ï¿½ Exceptional on-resistance and

maximum DC current capability

ï¿½ SOP-8 package design

PART MARKING

SOP-8

ORDERING INFORMATION

Part Number

Package

Part Marking

STN9926S8RG

SOP-8

STN9926

STN9926S8TG

SOP-8

STN9926

â» Process Code : A ~ Z ; a ~ z

â» STN9926S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb â Free

â» STN9926S8TG S8 : SOP-8 ; T : Tube ; G : Pb â Free

120 Bentley Square, Mountain View, Ca 94040 USA

www.syonsontech.com

STN9926 2007. V1

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