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| STN8822A Datasheet, PDF (1/7 Pages) Stanson Technology – Dual N Channel Enhancement Mode MOSFET | |||
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STN8822A
Dual N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
STN8822A is the dual N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as notebook computer power management and
other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSOP-6
FEATURE
20V/6.0A, RDS(ON) = 25m-ohm
@VGS =4.5V
20V/5.0A, RDS(ON) =42m-ohm
@VGS =2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional low on-resistance and
maximum DC current capability
TSOP-6 package design
Fï¼Year Code
A: Produces Code
Xï¼Wafer Code
2
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8822A 2009. V1
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