STN8822 Datasheet, PDF (1/7 Pages) Stanson Technology – Dual N Channel Enhancement Mode MOSFET

STN8822
Dual N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
STN8822 is the dual N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as notebook computer power management and
other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSSOP-8
FEATURE
20V/8.0A, R_DS(ON) = 20m-ohm (Typ.)
@VGS =4.5V
20V/7.0A, R_DS(ON) =24m-ohm
@VGS =2.5V
20V/3.0A, R_DS(ON) =32m-ohm
@VGS =1.8V
Super high density cell design for
extremely low R_DS(ON)
Exceptional low on-resistance and
maximum DC current capability
TSSOP-8 package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8822 2009. V1