 English |
|
|
|
|
|
|
|
| STN8205D Datasheet, PDF (1/6 Pages) Stanson Technology – Dual N Channel Enhancement Mode MOSFET | |||
| |||
|
STN8205D
Dual N Channel Enhancement Mode MOSFET
5.0A
DESCRIPTION
STN8205D is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSOP-6
G1 D G2
STN8205
SYA
FEATURE
z 20V/4.0A, R = DS(ON) 30m-ohm@VGS =4.5V
z 20V/3.4A, RDS(ON) =42m-ohm@VGS =2.5V
z Super high density cell design for extremely
low RDS(ON)
z Exceptional low on-resistance and maximum
DC current capability
z TSOP-6 package design
S1 D S2
Sï¼Subcontractor
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STN8205DST6RG
TSOP-6
SYA
â» Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
â» ST8205DST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb â Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese