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| STN8205AA Datasheet, PDF (1/7 Pages) Stanson Technology – Dual N Channel Enhancement Mode MOSFET | |||
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STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
STN8205AA is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSSOP-8
D2 S2 S2 G2
8 7 6 5
STN8205AA
SYA
FEATURE
z 20V/6.0A, R = DS(ON) 30m-ohm@VGS =4.5V
z 20V/5.0A, RDS(ON) =42m-ohm@VGS =2.5V
z Super high density cell design for extremely
low RDS(ON)
z Exceptional low on-resistance and maximum
DC current capability
z TSSOP-8 package design
1 23 4
D1 S1 S1 G1
SÄSubcontractor
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STN8205AAST8RG
TSSOP-8
SYA
± Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
± ST8205AAST8RG ST8 : TSSOP-8; R: Tape Reel ; G: Pb â Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205AA 2007. V1
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