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| STN8205A Datasheet, PDF (1/7 Pages) Stanson Technology – Dual N Channel Enhancement Mode MOSFET | |||
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STN8205A
Dual N Channel Enhancement Mode MOSFET
5.0A
DESCRIPTION
STN8205A is the dual N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as notebook computer power management and
other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSSOP-8
D2 S2 S2 G2
FEATURE
l 20V/5.0A, RDS(ON) = 21m-ohm (Typ.)
@VGS =4.5V
l 20V/3.0A, RDS(ON) =27m-ohm
@VGS =2.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional low on-resistance and
maximum DC current capability
l TSSOP-8 package design
D1 S1 S1 G1
Y: Year Code
A: Date Code
B: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205A 2007. V1
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