STN6562 Datasheet, PDF (1/6 Pages) Stanson Technology – Dual N Channel Enhancement Mode MOSFET

STN6562
Dual N Channel Enhancement Mode MOSFET
4.0A
DESCRIPTION
The STN6562 is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as cellular phone and notebook
computer power management and other battery powered circuits, and low in-line
power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6
D1 S1 D2
62YW
FEATURE
◆ 30V/4.0A, RDS(ON)=65mohm@VGS=10V
◆ 30V/2.2A, RDS(ON)=75mohm@VGS=4.5V
◆ 30V/1.5A, RDS(ON)=105mohm@VGS=2.5V
◆ Super high density cell design for extremely low
RDS(ON)
◆ Exceptional an-resistance and maximum DC
current capability
◆ TSOP-6 package design
G1 S2 G2
Y: Year
A: Week Code
n-channel
n-channel
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP6562 2008. V1