STN6335 Datasheet, PDF(1/6 Page) Stanson Technology – STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

STN6335 Datasheet, PDF (1/6 Pages) Stanson Technology – STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STN6335

Dual N Channel Enhancement Mode MOSFET

0.95A

DESCRIPTION

STN6335 is the dual N-Channel enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize on-state resistance and provide superior switching

performance. These devices are particularly suited for low voltage applications such as

notebook computer circuits where high-side switching, low in-line power loss and

resistance to transients are needed.

PIN CONFIGURATION

SOT-363 / SC70-6L

D1 G2 S2

35YW

FEATURE

ï¿½ 20V/0.95A, RDS(ON) = 380mÎ©@VGS =4.5V

ï¿½ 20V/0.75A, RDS(ON) =450mÎ©@VGS =2.5V

ï¿½ 20V/0.65A, RDS(ON) =800mÎ©@VGS =1.8V

ï¿½ Super high density cell design for extremely

low RDS(ON)

ï¿½ Exceptional low on-resistance and maximum

DC current capability

ï¿½ SOT-363 / SC70-6L package design

S1 G D2

Y: Year

A: Process Code

ORDERING INFORMATION

Part Number

Package

STN6335

SOT-363 / SC70-6L

â» Process Code : A ~ Z(1~26) ; a ~ z(27~52)

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

Part Marking

STN6335 2008. V1

▷