STN6303 Datasheet, PDF(1/6 Page) Stanson Technology – STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN6303 Datasheet, PDF (1/6 Pages) Stanson Technology – STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STN6303

Dual N Channel Enhancement Mode MOSFET

1.0A

DESCRIPTION

STN6303 is the dual N-Channel enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize on-state resistance and provide superior switching

performance. These devices are particularly suited for low voltage applications such as

notebook computer circuits where high-side switching, low in-line power loss and

resistance to transients are needed.

PIN CONFIGURATION

SOT-363 / SC70-6L

D1 G2 S2

53YW

FEATURE

23V/0.5A, R = DS(ON) 400m-ohm@VGS =4.5V

23V/0.75A, RDS(ON) =550m-ohm@VGS =2.5V

Super high density cell design for extremely

low RDS(ON)

Exceptional low on-resistance and maximum

DC current capability

SOT-363 / SC70-6L package design

S1 G D2

Y: Year

W: Process Code

ORDERING INFORMATION

Part Number

Package

STN6303

SOT-363 / SC70-6L

â» Process Code : A ~ Z(1~26) ; a ~ z(27~52)

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

Part Marking

STN6303 2008. V1

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