STN4946 Datasheet, PDF(1/7 Page) Stanson Technology – Dual N Channel Enhancement Mode MOSFET

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STN4946 Datasheet, PDF (1/7 Pages) Stanson Technology – Dual N Channel Enhancement Mode MOSFET

STN4946

Dual N Channel Enhancement Mode MOSFET

12A

DESCRIPTION

The STN4946 is the Dual N-Channel logic enhancement mode power field effect

transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , notebook computer

Li-ion Battery , power management and other battery powered circuits where high-side

switching .

PIN CONFIGURATION

SOP-8

FEATURE

ï¿½ 60V/12A, RDS(ON) = 44mÎ© (Typ.)

@VGS = 10V

ï¿½ 60V/8.0A, RDS(ON) =50mÎ©

@VGS = 4.5V

ï¿½ Super high density cell design for

extremely low RDS(ON)

ï¿½ Exceptional on-resistance and

maximum DC current capability

ï¿½ SOP-8 package design

PART MARKING

SOP-8

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4946 2009. V1

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