STN4826 Datasheet, PDF (1/6 Pages) Stanson Technology – Dual N Channel Enhancement Mode MOSFET

STN4826
Dual N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
The STN4826 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application , notebook computer power
management and other battery powered circuits where high-side switching .
PIN CONFIGURATION
SOP-8
FEATURE
60V/ 8.0A, R_DS(ON) = 30mΩ (Typ.)
@VGS = 10V
60V/6.0A, R_DS(ON) = 40mΩ
@VGS = 4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
MARKING
Y: Year Code
A: Porduce Code
B: Process Code
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4826 2013. V1