STN4822 Datasheet, PDF(1/6 Page) Stanson Technology – STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

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STN4822 Datasheet, PDF (1/6 Pages) Stanson Technology – STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

STN4822

Dual N Channel Enhancement Mode MOSFET

8.5A

DESCRIPTION

STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors

which are produced using high cell density DMOS trench technology. It is suitable for

the power management applications in the portable or battery powered system.

PIN CONFIGURATION

SOP-8

FEATURE

ï¿½ 30V/8.5A, RDS(ON) = 16mÎ© (Typ.)

@VGS = 10V

ï¿½ 30V/6.6A, RDS(ON) = 26mÎ©

@VGS = 4.5V

ï¿½ Super high density cell design for

extremely low RDS(ON)

ï¿½ Exceptional on-resistance and maximum

DC current capability

ï¿½ SOP-8 package design

PART MARKING

SOP-8

Y:Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4822 2009. V1

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