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| STN456DN Datasheet, PDF (1/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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STN456DN
N Channel Enhancement Mode MOSFET
70A
DESCRIPTION
STN456DN uses Trench MOSFET technology that is uniquely optimized to provide the
most efficient nigh frequency switching performance. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION
POWER PACK 5x6 (1212-8L)
DD DD
FEATURE
l 30V/30A, RDS(ON) = 4.0mΩï¼Typ.ï¼
@VGS = 10V
l 30V/15A, RDS(ON) = 5.8mΩ
@VGS = 4.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional on-resistance and
maximum DC current capability
l PPAK5x6 (1212-8L) package design
S S SG
Yï¼Year Code
Aï¼Date Code
Bï¼Package Code
Cï¼Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN456DN 2016 V1
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