STN4546 Datasheet, PDF(1/6 Page) Stanson Technology – STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN4546 Datasheet, PDF (1/6 Pages) Stanson Technology – STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STN4546

N Channel Enhancement Mode MOSFET

6.0A

DESCRIPTION

STN4526 is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as power management and other

battery powered circuits where high-side switching.

PIN CONFIGURATION

SOP-8

FEATURE

ï¿½ 40V/10.0A, RDS(ON) = 20mÎ© (Typ.)

@VGS = 10V

ï¿½ 40V/8.0A, RDS(ON) = 23mÎ©

@VGS = 4.5V

ï¿½ 40V/6.0A, RDS(ON) = 27mÎ©

@VGS = 2.5V

ï¿½ Super high density cell design for

extremely low RDS(ON)

ï¿½ Exceptional on-resistance and

maximum DC current capability

ï¿½ SOP-8 package design

PART MARKING

STN4546

Y: Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4546 2009. V1

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